National Tsing Hua University Institutional Repository:Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate
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    National Tsing Hua University Institutional Repository > 工學院  > 動力機械工程學系 > 期刊論文 >  Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate


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    题名: Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate
    作者: Jiang, Hongrui;Yoo, Kyutae;Yeh, Jer-Liang Andrew;Li, Zhihong;Tien, Norman C.
    教師: 葉哲良
    日期: 2002
    出版者: Institute of Electrical and Electronics Engineers
    關聯: JOURNAL OF MICROMECHANICS AND MICROENGINEERING, Institute of Electrical and Electronics Engineers, Volume 12, Issue 1, JAN 2002, Pages 87-95
    关键词: Silica
    Substrates
    Reactive ion etching
    Micromachining
    Thermooxidation
    Deposition
    Surfaces
    Integrated circuits
    Capacitors
    Electric transformers
    摘要: A silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-μm-deep silicon dioxide blocks.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/50454
    显示于类别:[動力機械工程學系] 期刊論文

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