English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13568448      Online Users : 114
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 工學院  > 動力機械工程學系 > 會議論文  >  Thermal management on hot spot elimination / junction temperature reduction for high power density system in package structure


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/50823


    Title: Thermal management on hot spot elimination / junction temperature reduction for high power density system in package structure
    Authors: Chou, Chan-Yen;Wu, Chung-Jung;Wei, Hsiu-Ping;Yew, Ming-Chih;Chiu, Chien-Chia;Chiang, Kuo-Ning
    教師: 江國寧
    Date: 2007
    Publisher: American Society Of Mechanical Engineers
    Relation: ASME 2007 InterPACK Conference, Vancouver, British Columbia, Canada, July 8–12, 2007, Pages 227-232
    Keywords: Chip scale packages
    Electric power system
    Energy dissipation
    Product design
    Semiconductor junctions
    Temperature control
    Abstract: In this paper, a thermal enhanced design for a high power density system in package (SiP) is proposed to resolve the challenge faced by the packaging research community in eliminating the hot spot and reducing the junction temperature in a high operation temperature. The SiP structure includes seven sub-chips which are attached to the chip carrier. The dissipated heat is conducted to the metal slug by thermal vias, while some heat is conducted to the pads by metal traces. Finally, the whole module is connected to the test board by solder paste material. In the thermal enhanced design, a highly conductive material such as solder paste is applied to make an attachment between the chip carrier and the highest power density chip (the power amplifier chip). Besides, some thermal vias are constructed to conduct the dissipated heat from the chip carrier to the metal slug. The new structure greatly improves the thermal performance of the SiP structure. Moreover, the hot spot on the chip carrier is also eliminated in this thermal enhanced SiP structure.
    URI: http://www.asme.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/50823
    Appears in Collections:[動力機械工程學系] 會議論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML462View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback