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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52143


    Title: Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters
    Authors: Liou, Yan-Lun;Liou, Jyun-Cheng;Huang, Jin-Hua;Tai, Nyan Hwa;Lin, I-Nan
    教師: 戴念華
    Date: 2008
    Publisher: Elsevier
    Relation: DIAMOND AND RELATED MATERIALS,Volume: 17,Issue: 4-5,Special Issue: Sp. Iss. SI,Pages: 776-781,Published: APR-MAY 2008
    Keywords: DOPED ULTRANANOCRYSTALLINE DIAMOND
    ELECTRON-EMISSION
    NANODIAMOND
    Abstract: Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (beta = 1500-1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25-5.50 V/mu m, attaining 5500-6000 mA/mm(2) at 12.5 V/mu m (100 V applied voltage).
    URI: http://www.elsevier.com/wps/find/homepage.cws_home
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52143
    Appears in Collections:[材料科學工程學系] 期刊論文

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