Titanium films of 35 nm thickness are deposited on Si(001) by direct current magnetron sputtering. Rapid thermal annealing (RTA) in nitrogen atmosphere is performed on the films for 20 s at 670°C. The residual titanium is etched off with a solution of H2O2:NH4OH:H2O (1:1:5). A second RTA at 900°C for 10 s is applied again. The result is a C54 phase of TiSi2 of 65 nm thickness. By means of X-ray diffraction analysis, transmission electron microscopy and superlattice mismatch calculation, two epitaxial relationships: (004)C54//(001)Si, [11 3 0]C54//Si and (311)C54//(001)Si, C54//Si are established.