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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Epitaxial Growth of C54 TiSi2 on Si(001) by Self-Aligned Process


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52272


    Title: Epitaxial Growth of C54 TiSi2 on Si(001) by Self-Aligned Process
    Authors: Li-Ming Wang;Shinn-Tyan Wu
    吳信田
    教師: 材料系
    Date: 1997
    Publisher: Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,Volume: 37,Issue: 2,Pages: 638-642,Published: FEB 1998
    Keywords: PHASE-TRANSFORMATION
    TITANIUM SILICIDE
    CMOS DEVICES
    Abstract: Titanium films of 35 nm thickness are deposited on Si(001) by direct current magnetron sputtering. Rapid thermal annealing (RTA) in nitrogen atmosphere is performed on the films for 20 s at 670°C. The residual titanium is etched off with a solution of H2O2:NH4OH:H2O (1:1:5). A second RTA at 900°C for 10 s is applied again. The result is a C54 phase of TiSi2 of 65 nm thickness. By means of X-ray diffraction analysis, transmission electron microscopy and superlattice mismatch calculation, two epitaxial relationships: (004)C54//(001)Si, [11 3 0]C54//[110]Si and (311)C54//(001)Si, [271]C54//[110]Si are established.
    URI: http://www.jsap.or.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52272
    Appears in Collections:[材料科學工程學系] 期刊論文

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