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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Effects of Nb doping on highly fatigue-resistant thin films of (Pb0.8Ba0.2)ZrO3 for ferroelectric memory application


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52279


    Title: Effects of Nb doping on highly fatigue-resistant thin films of (Pb0.8Ba0.2)ZrO3 for ferroelectric memory application
    Authors: Cheng-Lung Hung;Tai-Bor Wu
    教師: 吳泰伯
    Date: 2004
    Publisher: Elsevier
    Relation: Journal of Crystal Growth, Volume 274, Issues 3-4, 1 February 2005, Pages 402-406
    Keywords: Polycrystalline deposition
    Oxides
    Ferroelectric materials
    Abstract: Niobium-doped (Pb0.8Ba0.2)ZrO3 (PBNZ) thin films were prepared by RF-magnetron sputtering at room temperature followed by postannealing at 700 °C. The doping concentration of Nb is in the range from 0 up to 2.5 at%. The introduction of Nb enhances the ferroelectric property and suppresses the leakage current of the PBNZ films. A large remanent polarization (Pr) of 2Pr=35 μC/cm2 can be obtained from a doping of 1.5 at% Nb in the PBNZ film in comparison to that of 19 μC/cm2 from the undoped PBZ film. The Pt/PBNZ/Pt capacitor also exhibits a high fatigue resistance against polarization switching up to 1010 cycle as that of Pt/PBZ/Pt. Moreover, an improvement of retention property can be also achieved from Nb doping.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52279
    Appears in Collections:[材料科學工程學系] 期刊論文

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