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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  An analysis of thermal stresses in a multilayer thin film printhead


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52460


    Title: An analysis of thermal stresses in a multilayer thin film printhead
    Authors: Jou, J.H.;Hsu, L.;Chang, L.S.
    教師: 周卓輝
    Date: 1991
    Publisher: Elsevier
    Relation: Thin Solid Films
    Volume 201, Issue 2, 30 June 1991, Pages 253-265
    Keywords: SiO2
    Si
    HfB2
    Si3N4
    SiC
    film printhead
    Abstract: A general formula for the analysis of thermal stresses and radii of curvature of multilayer structures is given. The stresses and bending curvature in a SiO2/Si/SiO2/HfB2/Si3N4/SiC multilayer thin film printhead are calculated using this formula. It is found that processing and substrate temperatures have a strong influence on the sign and magnitude of thermal stress in each layer and on the bending curvature at each processing step. On the basis of temperature profiles in the printhead during an operating cycle, stresses in the layers as a function of time are calculated. There exist large compressive stresses in the resistor (HfB2) and the top overcoat (SiC) when the device temperature peaks near 400°C. Effects of thermal stress and elastic strain energy on device fabrication and integrity are also considered. Thus, a carbide layer thinner than 1.5 μm is recommended to avoid film fracture, whereas a substrate temperature of 220°C is suggested for the deposition of the resistor to prevent delamination
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52460
    Appears in Collections:[材料科學工程學系] 期刊論文

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