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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52518


    Title: Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
    Authors: Hao OY;Wu YCS;Chiou HH;Liu CC;Cheng JH;Wen OY;Chiou SH;Shiue ST;Chueh YL;Chou LJ
    教師: 周立人
    Date: 2006
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters , Volume 88 , Issue 11, pp.88-90
    Keywords: THIN-FILMS
    TEMPERATURE
    FABRICATION
    RESISTANCE
    Abstract: Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 degrees C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 degrees C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 degrees C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52518
    Appears in Collections:[材料科學工程學系] 期刊論文

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