National Tsing Hua University Institutional Repository:Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13686196      Online Users : 36
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    NTHUR > College of Engineering  > Department of Material Science and Engineering  > MSE Journal / Magazine Articles  >  Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52538


    Title: Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals
    Authors: Lin GR;Lin CJ;Chou LJ;Chueh YL
    Teacher: 周立人
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Nanotechnology, IEEE Transactions on , Volume: 5 Issue:5 , pp.511 - 516
    Keywords: CHEMICAL-VAPOR-DEPOSITION
    THIN-FILMS
    SILICON NANOCRYSTALS
    OPTICAL-PROPERTIES
    GLASS
    CRYSTALLIZATION
    PHOTOLUMINESCENCE
    OXYGEN
    Abstract: The optical properties of a SiOx film rapid-thermal-annealed (RTA) by CO2 laser are primarily investigated. The microphotoluminescence (mu-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P-laser) is larger than 4.5 kW/cm(2). At P-laser of 6 kW/cm(2), the Si nanocrystal exhibits a largest diameter of 8 run and a highest density of 4.5 x 10(16) cm(-3), which emits strong PL at 790-825 nm. The microphotoreflectance of the CO2 laser RTA SiOx film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P-laser increases from 1.5 to 7.5 kW/cm(2). Nonetheless, the laser ablation of the SiOx film occurs with a linear ablation slope of 35 nm/kW/cm(2) at beyond 7.5 kW/cm(2), which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO2 laser RTA SiOx film.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52538
    Appears in Collections:[Department of Material Science and Engineering ] MSE Journal / Magazine Articles

    Files in This Item:

    File Description SizeFormat
    2020315010031.pdf818KbAdobe PDF319View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback