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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Effects of ion-implantation on the formation of light-emitting FeSi2 in Fe thin films on (001)Si


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52592


    Title: Effects of ion-implantation on the formation of light-emitting FeSi2 in Fe thin films on (001)Si
    Authors: Lu HT;Chen LJ;Chueh YL;Chou LJ
    教師: 周立人
    Date: 2004
    Publisher: Elsevier
    Relation: Thin Solid Films
    Volumes 447-448, 30 January 2004, Pages 349-353
    Keywords: SEMICONDUCTING FESI2
    MU-M
    ELECTRONIC-PROPERTIES
    BETA-FESI2
    ELECTROLUMINESCENCE
    PHOTOLUMINESCENCE
    HETEROSTRUCTURES
    DISILICIDE
    DIODE
    Abstract: The formation of iron silicides on (0 0 1)Si and the effects of BF2+-, As+- and P+-implantation on the phase transformation have been investigated. All implantation species were found to enhance the growth of light-emitting beta-FeSi2 with the effects of P+- and As+-implantation most and least pronounced, respectively. The transformation temperature from FeSi to beta-FeSi2 was lowered from 700 to 600 degreesC and the formation of beta-FeSi2 was completed at 700 degreesC. The transformation of beta-FeSi2 from FeSi was found to be by clustered growth. Grain boundaries were observed to be decorated with As atoms in the As+-implanted samples annealed at 700-800 degreesC. The As-rich grain boundaries disappeared after 900 degreesC annealing.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52592
    Appears in Collections:[材料科學工程學系] 期刊論文

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