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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52601

    Title: Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films
    Authors: Jiwei Zhai;Haydn Chen;Eugene V Colla;T B Wu
    教師: 吳泰伯
    Date: 2003
    Publisher: Institute of Physics
    Relation: J. Phys.: Condens. Matter.,Vol. 15, pp. 963-969
    Keywords: thin films
    Abstract: (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol–gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE–FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE–FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE–FE transformation temperature shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE–FE phase transformation temperature is increased.
    URI: http://www.iop.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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