National Tsing Hua University Institutional Repository:Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13957020      Online Users : 107
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    NTHUR > College of Engineering  > Department of Material Science and Engineering  > MSE Journal / Magazine Articles  >  Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52740


    Title: Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
    Authors: Lee,Yen-Chih;Lin,Su-Jien;Pradhan,Debabrata;Lin,I-Nan
    Teacher: 林樹均
    Date: 2006
    Publisher: Elsevier
    Relation: Diamond and Related Materials
    Volume 15, Issues 2-3, February-March 2006, Pages 353-356
    Keywords: Diamonds
    Nucleation
    Nanostructured materials
    Synthesis
    Grain size and shape
    Abstract: Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H 2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20 [similar to] 30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but was less influenced by the microwave power. All of these UNCD films showed similar morphology, i.e., with grain size less than 10 nm and surface roughness around 10 nm. They also possess similar Raman spectra, i.e., similar crystallinity. However, the deposition rate can be increased from [similar to] 0.2 to 1.0 μm/h when substrate temperature increased from 400 to 600 °C.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52740
    Appears in Collections:[Department of Material Science and Engineering ] MSE Journal / Magazine Articles

    Files in This Item:

    File Description SizeFormat
    2020305010011.pdf448KbAdobe PDF639View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback