National Tsing Hua University Institutional Repository:Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique


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    题名: Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
    作者: Lee,Yen-Chih;Lin,Su-Jien;Pradhan,Debabrata;Lin,I-Nan
    教師: 林樹均
    日期: 2006
    出版者: Elsevier
    關聯: Diamond and Related Materials
    Volume 15, Issues 2-3, February-March 2006, Pages 353-356
    关键词: Diamonds
    Nucleation
    Nanostructured materials
    Synthesis
    Grain size and shape
    摘要: Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H 2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20 [similar to] 30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but was less influenced by the microwave power. All of these UNCD films showed similar morphology, i.e., with grain size less than 10 nm and surface roughness around 10 nm. They also possess similar Raman spectra, i.e., similar crystallinity. However, the deposition rate can be increased from [similar to] 0.2 to 1.0 μm/h when substrate temperature increased from 400 to 600 °C.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52740
    显示于类别:[材料科學工程學系] 期刊論文

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