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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Ag buffer layer effect on magnetization reversal of epitaxial Co films


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52861


    Title: Ag buffer layer effect on magnetization reversal of epitaxial Co films
    Authors: D. H. Wei;C. C. Yu;S. C. Chou;Y. D. Yao;Y. Liou;T. S. Chin
    教師: 金重勳
    Date: 2004
    Publisher: John Wiley & Sons
    Relation: physica status solidi (a)
    Volume 201, Issue 15, pages 3361–3365, December 2004
    Keywords: Ag
    buffer
    layer
    magnetization
    reversal
    epitaxial
    Co
    films
    Abstract: Nano-sized Ag(111) islands were first prepared by using molecular beam epitaxy technique on diluted-hydrofluoric acid etched Si(111) substrate. Epitaxial Co films were then grown onto the Ag films at 100 蚓 to decrease interdiffusion. The Ag buffer layer designed to form isolated islands with {111} sidewalls on the Si(111) substrate, and provided Co films (111) texture growth to study the correlation between magnetic properties of Co films and Ag buffer layer effect. It reveals that the Ag rough surface acts as a pinning source and Ag {111} sidewalls also plays an important role on the magnetoresistance transition of Co films.
    URI: http://www.wiley.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52861
    Appears in Collections:[材料科學工程學系] 期刊論文

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