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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 會議論文  >  Simulation study of phase-change optical recording disks


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52887


    Title: Simulation study of phase-change optical recording disks
    Authors: Lih-Hsin Chou;Chun-Ping Jen;Ching-Chang Chieng
    教師: 周麗新
    Date: 1999
    Publisher: Japanese Journal of Applied Physics
    Relation: Jpn. J. Appl. Phys. 38 (1999) pp. 1614-1620
    Keywords: phase-changed
    room-temperature
    Abstract: Effects of phase change in the recording layer due to temperature changes and the material parameters used in the simulated transient temperature distributions were examined. The initial structure of the recording layer was the key parameter for simulated temperature distributions in both the erasing and writing processes. Latent heat due to the phase change had little effect on the transient temperature distributions, however, the temperature-dependent heat capacity had significant effects and resulted in a transient temperature distribution level lower than that using a constant room-temperature capacity value. From the simulated transient temperature profile, cooling rate, dependence of phase-changed spot size on the laser power and laser pulse duration, as well as the phase-change characteristics in the phase-change optical disk, could be obtained. By applying proper material parameters, the disk with a hydrogenated amorphous carbon film as the top dielectric layer with a disk structure of PC/ZnS-SiO2(111nm)/GeSbTe(20 nm)/α-C:H (63 nm)/Al(70 nm) showed less temperature variation between the center and the edge of the irradiated spot than that of a disk with a conventional disk structure of PC/ZnS-SiO2(144 nm)/GeSbTe(20 nm)/ZnS-SiO2(21 nm)/Al(70 nm). Less temperature variation may give rise to a written spot with more uniform microstructures.
    URI: http://jjap.ipap.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52887
    Appears in Collections:[材料科學工程學系] 會議論文

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