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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 會議論文  >  A high performance 180 nm nonvolatile memory cell using phase change Sn-Doped Ge2Sb2Te5 chalcogenide


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52902


    Title: A high performance 180 nm nonvolatile memory cell using phase change Sn-Doped Ge2Sb2Te5 chalcogenide
    Authors: Chen, Y.C.;Chen, H.P.;Liao, Y.Y.;Lin, H.T.;Chou, L.H.;Kuo, J.S.;Chen, P.H.;Lung, S.L.;Rich Liu
    教師: 周麗新
    Date: 2003
    Relation: 2003 International Symposium on VLSI Technology,Systems,2003 VLSI-TSA,台北市
    Keywords: high performance 180 nm nonvolatile memory cell
    Sn-Doped Ge2Sb2Te5 chalcogenide
    Abstract: Chalcogenide phase change memory has high potential to be the next generation memory, because it is a nonvolatile memory possessing high programming speed, low programming voltage, high sensing margin, high scalability, low energy consumption and long cycle duration. Sn doped Ge2Sb2Te5 chalcogenide device is investigated in this paper. The conductivity of Sn doped Ge2Sb2Te5 is affected by the ambient temperature in a semiconductor fashion and the activation energy for conductivity for crystalline state and amorphous state are 0.073 eV and 0.41 eV, respectively. Computer simulation reveals that the hot zone of the device is inside of the chalcogenide. Electrical testing indicates that programming time of the chalcogenide device is less than 100 ns, and the energy required for 180 nm device is less than 400 pJ. More than 100 cycles was achieved with a set/reset resistance ratio more than 300%.
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52902
    Appears in Collections:[材料科學工程學系] 會議論文

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