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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Ion-channeling studies of InAs/GaAs quantum dots

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54422

    Title: Ion-channeling studies of InAs/GaAs quantum dots
    Authors: Niu, H.;Chen, C.H.;Wang, H.Y.;Wu, S.C.;Lee, C.P.
    教師: 吳秀錦
    Date: 2005
    Publisher: Elsevier
    Relation: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volume 241, Issues 1-4, December 2005, Pages 470-474
    Keywords: channelling radiation
    III-V semiconductors
    indium compounds
    semiconductor quantum dots
    Abstract: Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along 〈001〉 growth direction and 〈011〉 direction will be presented and discussed briefly.
    URI: http://www.elsevier.com/
    Appears in Collections:[物理系] 期刊論文

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