National Tsing Hua University Institutional Repository:Electrical size effects of thin C54-TiSi2 films grown on silicon substrates
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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Electrical size effects of thin C54-TiSi2 films grown on silicon substrates


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    题名: Electrical size effects of thin C54-TiSi2 films grown on silicon substrates
    作者: Jeng-Rern Yang;Juh Tzeng Lue
    教師: 呂助增
    日期: 1988
    出版者: Elsevier
    關聯: Solid State Communications, Elsevier, Volume 65, Issue 12, March 1988, Pages 1613-1616
    关键词: films
    silicon
    摘要: The temperature dependences of the Hall constant RH and resistivity ρ at various thickness for C54-TiSi2 films grown on (1 1 1) and (1 0 0) silicon substrates are measured. The resistivity increases as temperature increases with a character incongruent with the Bloch-Gruneisen equation as followed by normal metals. The magnitude of RH has a flat appearance at high temperatures (for T > 400 K), and increases as the temperature decreases and reaches a maximum value near 360 K, and then decreases to reverse the sign at low temperatures. The thinner the film thickness, the higher the temperature for sign reversal. The experimental data can be satisfactorily explained by the classical size effect and two-band model.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54617
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