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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54656

    Title: Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors
    Authors: Yue-Min Wan;Kuo-Dong Huang;S. F. Hu;C. L. Sung;Y. C. Chou
    教師: 周亞謙
    Date: 2005
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 97, Issue 11, JUN 1 2005
    Keywords: oscillations
    single-electron transistor
    Abstract: Ultrathin oxide-gated (thickness ~6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current–voltage (I–V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron charging energy to a quantum dot of size ~8 nm, and also suggests electron tunneling is via the first excited state. These low-power ~30 pW and low-cost devices can be useful for the next generation nanoelectronics.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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