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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  The non-metallic conductivity of Nb3Ge films sputtered on silicon substrates

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54684

    Title: The non-metallic conductivity of Nb3Ge films sputtered on silicon substrates
    Authors: Li-Jui Chen;Jyh-Haur Tyan;Juh-Tzeng Lue
    教師: 呂助增
    Date: 1994
    Publisher: Elsevier
    Relation: Journal of Physics and Chemistry of Solids, Elsevier, Volume 55, Issue 9, September 1994, Pages 871-879
    Keywords: X-ray diffraction examination of materials
    transmission electron microscope examination of materials
    superconducting thin films
    sputtered coatings
    quantum interference phenomena
    niobium alloys
    hopping conduction
    electronic conduction in metallic thin films
    germanium alloys
    Abstract: In an attempt to study the transport properties of Nb3Ge thin films on silicon substrates, a series of resistance versus temperature curves for various samples are measured. We use the X-ray diffraction and transmission electron microscopy to characterize the film quality. To realize the electron scattering mechanism in Nb3Ge films, some theories are quoted by which we can explain the anomalous resistivity phenomenon. In this theoretical approach, we find that the metallic behavior of the samples can be explained by Bloch-Gruneisen's law while the non-metallic conductivity can be regarded as due to weak localization. Meanwhile, grain boundary scattering is found inappropriate to address the contribution in these films. The hopping conductivity of Nb3Ge films deposited on MgO substrates is also studied
    URI: http://www.elsevier.com/
    Appears in Collections:[物理系] 期刊論文

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