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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54887

    Title: Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions
    Authors: Ohno, H;Nagahara, LA;Gwo, S;Mizutani, W;Tokumoto, H
    教師: 果尚志
    Date: 1997
    Publisher: American Institute of Physics
    Relation: Molecular Crystals and Liquid Crystals, American Institute of Physics, Volume 294-295, 1997, Pages 487-90
    Keywords: STRATEGY
    Abstract: We have demonstrated that nanostructures of self-assembled monolayer (NSAM) films of alkanethiols can be formed on the GaAs surface of a AlGaAs/GaAs heterojunctions by cleaving the substrates in an octadecylthiol solution diluted with ethanol. NSAMs with line width as narrow as 5 nm were observed by phase imaging using tapping mode cross-sectional atomic force microscopy (TMXAFM). Time dependent observation of the surface in ail revealed that the nanostructual formation occurred as a results of both selective chemisorption of alkanethiol on GaAs surfaces and the oxidation of AlGaAs surface.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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