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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Scanning probe oxidation of Si3N4 masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54974


    Title: Scanning probe oxidation of Si3N4 masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon
    Authors: Gwo, S
    教師: 果尚志
    Date: 2001
    Publisher: Elsevier
    Relation: Journal of Physics and Chemistry of Solids, Elsevier, Volume 62, Issues 9-10, 10 September 2001, Pages 1673-1687
    Keywords: Scanning
    probe
    oxidation
    Si3N4
    masks
    nanoscale
    lithography
    micromachining
    selective
    epitaxial
    growth
    silicon
    Abstract: For studying the physical, chemical, and electronic properties of ultrasmall man-made structures, the major challenge is to fabricate highly uniform structures and control their positions on the nanometer length scale. Local oxidation of metals and semiconductors using a conductive-probe atomic force microscope (AFM) or other scanning probe microscopes in air at room temperature has emerged as a simple and universal method for this purpose. Here the uses of scanning probe oxidation Of Si3N4 masks for performing nanolithography, nanomachining, and nanoscale epitaxial growth on silicon are reviewed. The three most unique features of this approach are presented: (1) exceptionally fast oxidation kinetics using silicon nitride masks (similar to 30 mum/s at 10 V for a similar to5-nm-thick film); (2) selective-area anisotropic etching of Si using a Si3N4 etch mask; and (3) selective-area chemical vapor deposition of Si using a SiO2/Si3N4 bilayer growth mask.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54974
    Appears in Collections:[物理系] 期刊論文

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