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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Thermal nitridation of the Si(111)-(7X7) surface studied by scanning tunneling microscopy and spectroscopy


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54983


    Title: Thermal nitridation of the Si(111)-(7X7) surface studied by scanning tunneling microscopy and spectroscopy
    Authors: Wu, CL;Hsieh, JL;Hsueh, HD;Gwo, S
    教師: 果尚志
    Date: 2002
    Publisher: American Physical Society
    Relation: PHYSICAL REVIEW B, American Physical Society, Volume 65, Issue 4, JAN 15 2002
    Keywords: SILICON-NITRIDE
    2-DIMENSIONS
    ADSORPTION
    NITROGEN
    GROWTH
    ATOMS
    NH3
    SI
    Abstract: By using scanning tunneling microscopy and spectroscopy (STM and STS), the initial stages of NH3 exposure on Si(111)-(7x7) at different substrate temperatures and dosages have been studied. At room and very high (similar to1050degreesC) temperatures, the 7x7 surface structure remains and the nitrided sites appear darker, randomly distributing on the surface. Moreover, we find a constant ratio (similar to3.46-3.83) of reacted center adatoms to reacted corner adatoms on the partially nitrided surfaces. At intermediately temperatures (similar to900degreesC), the majority (>90%) of the reacted surface forms the well-ordered silicon nitride 8 X 8 reconstruction. In this regime, hexagonal- and triangular-shaped nitride islands can be observed on the 8x8 and 7x7 surfaces, respectively. We have also used STS to investigate the changes of local density of states on the nitrogen-reacted 7x7 surfaces prepared by different conditions.
    URI: http://www.aps.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/54983
    Appears in Collections:[物理系] 期刊論文

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