English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13871805      Online Users : 37
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  A study of surface and interlayer structures of epitaxially grown group-III nitride compound films on Si(111) substrates by second-harmonic generation


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55006


    Title: A study of surface and interlayer structures of epitaxially grown group-III nitride compound films on Si(111) substrates by second-harmonic generation
    Authors: Chen, CS;Lue, JT;Wu, CL;Gwo, S;Lo, KY
    教師: 果尚志
    Date: 2003
    Publisher: Institute of Physics
    Relation: JOURNAL OF PHYSICS-CONDENSED MATTER, Institute of Physics, Volume 15, Issue 38, OCT 1 2003, Pages 6537-6548
    Keywords: LAYERS
    DEFORMATION
    GAN
    SILICON
    CRYSTAL
    SYMMETRY
    REFLECTION
    THIN-FILMS
    NONLINEAR OPTICAL SUSCEPTIBILITIES
    2ND HARMONIC-GENERATION
    Abstract: The symmetry behaviour of AIN/Si(111) and GaN/AlN/Si(111) structures grown by molecular beam epitaxy has been analysed by measuring the rotational dependence of the polarized second-harmonic generation (SHG) intensity for different polarized fundamental beams. The crystalline structure has also been checked by reflection high-energy electron diffraction, x-ray diffraction and photoluminescence spectroscopy. Considering various contributions of the nonlinear response from the bulk and interfaces, the interface strain implies an inhomogeneous intensity variation of SHG as a function of the surface azimuthal rotation angle psi. This result provides a valuable illustration of the epitaxy quality and growth parameter characterization by a nondestructive method.
    URI: http://www.iop.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55006
    Appears in Collections:[物理系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML420View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback