National Tsing Hua University Institutional Repository:Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
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    NTHUR > College of Science  > Department of Physics > PHYS Journal / Magazine Articles  >  Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)

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    Title: Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
    Authors: Gwo, S;Wu, CL;Chien, FSS;Yasuda, T;Yamasaki, S
    Teacher: 果尚志
    Date: 2001
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Japanese Journal of Applied Physics, Volume 40, Issue 6B, JUN 2001, Pages 4368-4372
    Keywords: SI
    Abstract: Scanning tunneling microscopy (STM) was used to study the surface structure of ultrathin single-crystal Si3N4 film prepared by thermal nitridation, on an [111]-oriented Si substrate. Hi.-h-resolution STM images indicate that both 8 x 8 and 8/3 x 8/3 orderings exist on the surface of the single-crystal Si3N4 film. We also found that ultrathin Si3N4 films (< 5 nm) formed by thermal nitridation or low-pressure chemical vapor deposition on doped Si(111) and Si(001) substrates are excellent mask materials for nanolithography. Local oxidation of crystalline or amorphous silicon nitride films can be reliably performed with a conductive-probe atomic force microscope (AFM) with an extremely fast initial oxidation rate (five to six orders of magnitude higher than the thermal oxidation rate at 1000 degreesC) at a sample bias of +10 V. The nanopatterned silicon nitride masks can be used for selective-area high-aspect-ratio etching and epitaxial growth with large selectivities. Using an AFM-patterned SiO2/Si3N4 bilayer mask, selectively grown Si dots and lines of high crystalline perfection were successfully obtained.
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