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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55050


    Title: The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy
    Authors: Wu, CL;Shen, CH;Chen, HY;Tsai, SJ;Lin, HW;Lee, HM;Gwo, S;Chuang, TF;Chang, HS;Hsu, TM
    教師: 果尚志
    Date: 2006
    Publisher: Elsevier
    Relation: Journal of Crystal Growth, Elsevier, Volume 288, Issue 2, 1 March 2006, Pages 247-253
    Keywords: FUNDAMENTAL-BAND GAP
    MULTIPLE-QUANTUM WELLS
    HEXAGONAL INN
    WURTZITE INN
    V-DEFECTS
    TEMPERATURE
    INGAN/GAN
    Abstract: By using a new double-buffer-layer (AlN/Si3N4) technique. wurtzite-type InN(0 0 0 1) epitaxial films have been grown on Si(1 1 1) substrates by nitrogen-plasma-assisted molecular beam epitaxy. In this technique, a single crystal Si3N4 layer (commensurately matched to the (1 1 1) face of silicon) is used as a diffusion barrier to prevent intermixing and autodoping effects. And, the AlN(0 0 0 1) layer is used to form a 9:8 commensurate heterointerface with InN(0 0 0 1) despite a large difference in lattice constants. In this paper, we focus on the effects of the AlN buffer in terms of crystalline structure, optical, and electrical properties of grown InN epitaxial films. In addition to the use of the AlN buffer layer, the two-stage growth process (the growth of low-temperature (similar to 340 degrees C) InN epilayer prior to the growth of the high-temperature (similar to 520 degrees C) InN epilayer) was also Found to be very important to obtain high-quality InN films. By using the AlN/Si3N4 double buffer, InN-on-Si epitaxial films can be grown with high structural and optical properties. This was confirmed by reflection high-energy electron diffraction, X-ray diffraction, scanning electron microscopy, atomic force microscopy, and room-temperature photoluminescence. Furthermore, room-temperature Hall effect measurements indicate that increasing AlN buffer thickness leads to higher electron mobility and lower n-type carrier concentration in the InN epilayers, very important for electronic device applications.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55050
    Appears in Collections:[物理系] 期刊論文

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