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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Coherent electronic fringe structure in incommensurate silver-silicon quantum wells

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55116

    Title: Coherent electronic fringe structure in incommensurate silver-silicon quantum wells
    Authors: N. J. Speer;S.-J. Tang;T. Miller;T.-C. Chiang
    教師: 唐述中
    Date: 2006
    Publisher: American Association for the Advancement of Science
    Relation: Science, American Association for the Advancement of Science, Volume 314, Issue 5800, Nov. 2006, Pages 804-806
    Keywords: coherent electronic fringe structure
    atomically uniform silver films
    highly doped n-type Si(111) substrates
    Abstract: Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.
    URI: http://www.aaas.org/
    Appears in Collections:[物理系] 期刊論文

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