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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55150


    Title: Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry
    Authors: Ahn H;Shen CH;Wu CL;Gwo S
    教師: 果尚志
    Date: 2006
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 494, Issues 1-2, 3 January 2006, Pages 69-73
    Keywords: FUNDAMENTAL-BAND GAP
    INDIUM NITRIDE
    HEXAGONAL GAN
    WURTZITE INN
    GROWTH
    TEMPERATURE
    CONSTANTS
    Abstract: The refractive index and optical absorption of wurzite InN epilayers grown on Si(l 11) substrates with a beta-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76 - 0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55150
    Appears in Collections:[物理系] 期刊論文

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