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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55182


    Title: Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
    Authors: Shen CH;Chen HY;Lin HW;Gwo S;Klochikhin AA;Davydov VY
    教師: 果尚志
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 88, Issue 25, JUN 19 2006
    Keywords: ALN
    TRANSPORT
    FILMS
    SI(111)
    ROOM-TEMPERATURE
    ART. NO. 222103
    INDIUM NITRIDE NANOWIRES
    FUNDAMENTAL-BAND GAP
    MOLECULAR-BEAM EPITAXY
    Abstract: We demonstrate that vertically aligned InN nanorods can be grown on Si(111) by plasma-assisted molecular-beam epitaxy. Detailed structural characterization indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c axis. Near-infrared photoluminescence (PL) from InN nanorods can be clearly observed at room temperature. However, in comparison to the InN epitaxial films, the PL efficiency is significantly lower. Moreover, the variable-temperature PL measurements of InN nanorods exhibit anomalous temperature effects. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effects.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55182
    Appears in Collections:[物理系] 期刊論文

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