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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless copper

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55308

    Title: Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless copper
    Authors: LIN J. H.;TSAI Y. Y.;CHIU S. Y.;LEE T. L.;TSAI C. M.;CHEN P. H.;LIN C. C.;FENG M. S.;KOU C. S.;SHIH H. C.
    教師: 寇崇善
    Date: 2000
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volumes 377-378, 1 December 2000, Pages 592-596
    Keywords: Transition metal
    Amorphous state
    Palladium ion
    Inductively coupled plasma
    Ion implantation
    Diffusion barrier
    Microelectronic fabrication
    Abstract: The major aim of this study was to combine the techniques of using plasma immersion ion implantation (PIII) and electroless plating to implant Pd onto a Ta diffusion barrier layer as catalyst for the electroless Cu plating in order to accomplish the ULSI interconnection metallization. In our study, it has been demonstrated that the accelerating Pd+ ions by 2 kV pulsed negative bias voltages produce an amorphous Pd layer on β-Ta. The outermost Pd forms an oxide to the chemisorption of oxygen on Pd in air, while innermost Pd does not react with β-Ta, but instead remains in the form of metallic Pd. The Pd doses in the range of 5.7 × 1014 and 8.6 × 1014 cm-2 invokes an excellent catalytic effect on the electroless Cu plating. This results in an extraordinary ability for filling the submicron holes for gaining high quality electroless plated Cu interconnects, and thus qualifies for the traditional wet activation by SnCl2 and PdCl2 solutions.
    URI: http://www.elsevier.com/
    Appears in Collections:[物理系] 期刊論文

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