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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55498


    Title: Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection
    Authors: Nieh, C. W.;Lee, Y. J.;Lee, W. C.;Yang, Z. K.;Kortan, A. R.;Hong, M.;Kwo, J.;Hsu, C. -H.
    教師: 郭瑞年
    Date: 2008
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 92, Issue 6, 2008
    Keywords: GATE DIELECTRICS GD2O3
    SI
    DEPOSITION
    SILICON
    Abstract: Cubic phase Y2O3 films 1.6-10 nm thick of excellent quality have been epitaxially grown on Si (111) with Y2O3(111)parallel to Si(111) using electron beam evaporation of Y2O3 in ultrahigh vacuum. Structural and morphological studies were carried out by x-ray scattering and reflectivity and high-resolution transmission electron microscopy, with the growth being in situ monitored by reflection high energy electron diffraction. There are two Y2O3 domains in the initial stage of the oxide growth with equal population, and the B-type domain of Y2O3[2 (1) over bar(1) over bar]parallel to Si[11 (2) over bar] becomes predominating over the A-type domain of Y2O3[2 (1) over bar(1) over bar]parallel to Si[2 (1) over bar(1) over bar] with increasing film thickness. Besides the excellent crystallinity of the films as derived from the small omega-rocking curve width of 0.014 degrees, our results also show atomically sharp smooth surface and interfaces. (c) 2008 American Institute of Physics.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55498
    Appears in Collections:[物理系] 期刊論文

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