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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Molecular beam epitaxy grown template for subsequent atomic layer deposition of high kappa dielectrics


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55541


    Title: Molecular beam epitaxy grown template for subsequent atomic layer deposition of high kappa dielectrics
    Authors: Lee, K. Y.;Lee, W. C.;Lee, Y. J.;Huang, M. L.;Chang, C. H.;Wu, T. B.;Hong, M.;Kwo, J.
    教師: 郭瑞年
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 89, Issue 22, NOV 27 2006
    Keywords: GATE DIELECTRICS
    HFO2
    Abstract: Molecular beam epitaxy (MBE) grown high kappa dielectrics of Al2O3 and HfO2 are employed as templates to suppress effectively the oxide/Si interfacial layer formation during the subsequent atomic layer deposition (ALD) growth. The absence of the interfacial layer was confirmed using x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Two composite films consisting of ALD Al2O3(1.9 nm)/MBE Al2O3(1.4 nm) and ALD Al2O3(3.0 nm)/MBE HfO2(2.0 nm) showed overall kappa values of 9.1 and 11.5, equivalent oxide thicknesses of 1.41 and 1.7 nm, D-it of 2.2x10(11) and 2x10(11) cm(-2) eV(-1), and leakage current densities of 2.4x10(-2) A/cm(2) at V-fb-1 V and 1.1x10(-4) A/cm(2) at V-fb+1 V, respectively. The attainment of high dielectric constant suggests that there is no low kappa capacitor in series near the oxide/Si interface.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55541
    Appears in Collections:[物理系] 期刊論文

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