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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Structure of Sc2O3 films epitaxially grown on alpha-Al2O3 (0001)

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55552

    Title: Structure of Sc2O3 films epitaxially grown on alpha-Al2O3 (0001)
    Authors: A. R. Kortan;N. Kopylov;J. Kwo;M. Hong;C. P. Chen;J. P. Mannaerts
    教師: 郭瑞年
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 88, Issue 2, JAN 9 2006
    Abstract: The crystal structure of scandium oxide films epitaxially grown on alpha-Al2O3 (0001) under an ultrahigh-vacuum is studied by single-crystal x-ray diffraction. The Sc2O3 film grows in bixbyite phase on the basal (0001) surface of the sapphire substrate with its < 111 > axis aligned parallel to the substrate normal. In-plane orientation of the film, however, exhibits two distinct growth directions that are defined by the two possible surface orientations of the stepped alpha-Al2O3 substrate. The atomic structure of the high-quality epitaxial film is fully relaxed and the film has unusual thickness uniformity. (c) 2006 American Institute of Physics.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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