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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  THE ROLE OF DISORDER IN MAXIMIZING THE UPPER CRITICAL-FIELD IN THE NB-SN SYSTEM


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55641


    Title: THE ROLE OF DISORDER IN MAXIMIZING THE UPPER CRITICAL-FIELD IN THE NB-SN SYSTEM
    Authors: Orlando, T.;Alexander, J.;Bending, S.;Kwo, J.;Poon, S.;Hammond, R.;Beasley, M.;McNiff, E. Jr.;Foner, S.
    教師: 郭瑞年
    Date: 1981
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE TRANSACTIONS ON MAGNETICS, Institute of Electrical and Electronics Engineers, Volume 17, Issue 1, 1981, Pages 368-369
    Keywords: ROLE
    DISORDER
    MAXIMIZING
    UPPER
    CRITICAL-FIELD
    NB-SN SYSTEM
    Abstract: We have measured the transition temperature Tc, upper critical field Hc2(T) and the resistivity above Tc, ρTc, for thin films of electron beam co-evaporated Nb-Sn which were deposited as Nb3Sn at various substrate temperatures, or off-stoichiometry, or with tertiary additions of Al or Zr. The Tcand Hc2correlate with the resistivity, no matter how the materials were made. A maximum Hc2(0) of about 300 kOe occurs when ρTc∼ 30 μΩ-cm and the corresponding Tc∼ 16 K; also Hc2shows no sign of Pauli limiting.
    URI: http://ieeexplore.ieee.org
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55641
    Appears in Collections:[物理系] 期刊論文

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