English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13872379      Online Users : 78
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55994


    Title: GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
    Authors: P. D. Ye;G. D. Wilk;B. Yang, J. Kwo;S. N. G. Chu;S. Nakahara;H.-J. L. Gossmann;J. P. Mannaerts;M. Hong;K. K. Ng;J. Bude
    教師: 郭瑞年
    Date: 2003
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Volume 83, Issue 1, 2003, Pages 180-182
    Keywords: GATE INSULATOR
    IMPROVEMENT
    PASSIVATION
    OXIDATION
    MOSFETS
    MISFETS
    Abstract: A GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 mum gate-length depletion-mode n-channel GaAs MOSFET with an Al2O3 gate oxide thickness of 8 nm, an equivalent SiO2 thickness of similar to3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage. (C) 2003 American Institute of Physics
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55994
    Appears in Collections:[物理系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    2010113010113.pdf124KbAdobe PDF1090View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback