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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56011


    Title: Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy
    Authors: T.S. Laya;Y.Y. Liaoa;W.H. Hungb;M. Hongc;J. Kwoc;J.P. Mannaertsc
    教師: 郭瑞年
    Date: 2005
    Publisher: Elsevier
    Relation: Journal of Crystal Growth, Elsevier, Volume 278, Issues 1-4, 1 May 2005, Pages 624-628
    Keywords: interfaces
    molecular beam epitaxy
    gadolinium compounds
    nitrides
    dielectric materials
    semiconducting gallium compounds
    GAN
    Abstract: The depth profile of high-resolution photoelectron spectra at Ga2O3(Gd2O3)–GaN and Gd2O3–GaN interfaces grown by molecular beam epitaxy (MBE) has been obtained by using synchrotron radiation beam and low-energy Ar+ sputtering. The data indicate that both of the oxide layers are highly hygroscopic with the observation of O–H bonding. The valence-band offsets (ΔEV) of 1.1 and 1.0 eV were also measured for the Ga2O3(Gd2O3)–GaN and Gd2O3–GaN interfaces, respectively.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56011
    Appears in Collections:[物理系] 期刊論文

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