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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56104

    Title: Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS
    Authors: Chin, Albert;Chen, C.;Yu, D. S.;Kao, H. L.;McAlister, S. P.;Chi, C. C.
    教師: 齊正中
    Date: 2006
    Publisher: Elsevier
    Relation: Materials Science in Semiconductor Processing, Elsevier, Volume 9, Issues 4-5, August-October 2006, Pages 711-715
    Keywords: Compound semiconductor FETs
    Abstract: High mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm2/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm2/V s mobility was obtained, higher than the 340 cm2/V s of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-κ interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts.
    URI: http://www.elsevier.com/
    Appears in Collections:[物理系] 期刊論文

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