English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14802774      Online Users : 109
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56109

    Title: Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
    Authors: Huang, Chun-Yuan;Ou, Tzu-Min;Chou, Shu-Ting;Tsai, Cheng-Shuan;Wu, Meng-Chyi;Lin, Shih-Yen;Chi, Jim-Yong;Hsu, Bang-Yu;Chi, C. C.
    教師: 齊正中
    Date: 2007
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 515, Issue 10, 26 March 2007, Pages 4459-4461
    Keywords: Quantum dots
    Si doping
    Quantum dot infrared photodetector
    Abstract: We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 × 1011 cm− 2 were observed by atomic force microscope (AFM). From the high ratio of photoluminescence (PL) peak intensities from dot layer to that from wetting layer, we have concluded that high dot density caused the short diffusion length for carriers to be easily captured by QDs. Moreover, the Si-doped samples exhibited the multi-state transitions within the quantum dots, which were different to the single level transition of undoped sample. Besides, the dominant PL peaks of Si-doped samples were red-shifted by about 25 meV compared to that of the undoped sample. It should result from the dopant-induced lowest transition state and therefore, the energy difference should be equal to the binding energy of Si in InAs QDs.
    URI: http://www.elsevier.com/
    Appears in Collections:[物理系] 期刊論文

    Files in This Item:

    File Description SizeFormat


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback