National Tsing Hua University Institutional Repository:Single crystal rare earth oxides epitaxially grown on GaN
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 54367/62174 (87%)
造访人次 : 15224550      在线人数 : 147
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 會議論文  >  Single crystal rare earth oxides epitaxially grown on GaN


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56230


    题名: Single crystal rare earth oxides epitaxially grown on GaN
    作者: Hong, M.;Kortan, A.R.;Kwo, J.;Mannaerts, J.P.;Lee, C.M.;Chyi, J.I.
    教師: 郭瑞年
    日期: 2000
    出版者: Institute of Electrical and Electronics Engineers
    關聯: Compound Semiconductors, 2000 IEEE International Symposium on, Monterey, CA, USA, 2-5 Oct. 2000, Pages 495 - 500
    关键词: ultra-high vacuum
    Single-crystal X-ray
    high temperature hexagonal phases
    sesquioxides
    摘要: New single crystals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal X-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant the fully relaxed oxide films are of excellent structural quality
    URI: http://ieeexplore.ieee.org
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56230
    显示于类别:[物理系] 會議論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    2010113030005.pdf423KbAdobe PDF263检视/开启


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈