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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 會議論文  >  Characterization of low-temperature microwave annealed PZT thin films with various thicknesses

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56273

    Title: Characterization of low-temperature microwave annealed PZT thin films with various thicknesses
    Authors: Bhaskar, A.;Chang, T.H.;Chang, H.Y.;Cheng, S.Y.
    教師: 張存續
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz), Cardiff, UK, 2-9 Sept. 2007, Pages 526-527
    Keywords: Ferroelectric
    perovskite phase
    Abstract: Ferroelectric lead zirconium titanate (Pb (ZrxTi1-x) O3) thin films with various thicknesses were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel method with 2.45 GHz microwave energy. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the films. The thicknesses of PZT film were in the range of 99 to 420 nm, and films were annealed at 450°C for 30 min. The 99 and 168 nm-thick PZT films have mixed pyrochlore and perovskite phases. Above 168 nm-thick PZT films have complete perovskite phase. The full width at half maximum (FWHM), and the surface roughness were decreased as the film thickness increased. Relative dielectric constant and remnant polarization increased as the film thickness increased, which reflect the difference in crystallinity.
    URI: http://ieeexplore.ieee.org/iel5/4497233/4516365/04516614.pdf?arnumber=4516614
    Appears in Collections:[物理系] 會議論文

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