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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 會議論文  >  A method of growing YBa2Cu3Oy thin films on mismatched substrates


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56275


    Title: A method of growing YBa2Cu3Oy thin films on mismatched substrates
    Authors: Tsai, SH;Chi, CC;Wu, MK
    教師: 齊正中
    Date: 1998
    Publisher: 中華民國物理學會
    Relation: CHINESE JOURNAL OF PHYSICS, 中華民國物理學會, Volume 36, Issue 2, APR 1998, Pages 349-354
    Keywords: BICRYSTALS
    INTERFACE
    Abstract: We have studied YBa2Cu3Oy bi-layer thin films deposited at two different temperatures on mismatched substrates, such as MgO (a=b=c=0.412nm) and YSZ (a=b=c=0.5139nm). The bottom layer is deposited at a lower temperature (660 degrees C) while the top layer is deposited at the usual temperature (750 degrees C). The Tc of the bilayer film is significantly higher than that of the single layer for YSZ substrates. The five-circle X-ray results show different in-plane orientations for these two bi-layer thin films on MgO and YSZ substrates. The results are also compared with bi-layer thin films grown on well-matched substrates, such as SrTiO3 (a=b=c=0.3905nm).
    URI: http://adsabs.harvard.edu/abs/1998ChJPh..36..349T
    http://psroc.phys.ntu.edu.tw/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56275
    Appears in Collections:[物理系] 會議論文

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