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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 會議論文  >  Variations of interfacial roughness with epilayer thickness and scaling behavior in Si1-xGex grown on Si(100) substrates

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56278

    Title: Variations of interfacial roughness with epilayer thickness and scaling behavior in Si1-xGex grown on Si(100) substrates
    Authors: Ming, Z.H.;Huang, S.;Soo, Y.L.;Kao, Y.H.;Carns, T.;Wang, K.L.
    教師: 蘇雲良
    Date: 1995
    Publisher: Materials Research Society
    Relation: Proceedings of the 1994 MRS Fall Meeting, Boston, MA, USA,November 28, 1994 - December 2, 1994
    Keywords: Crystal lattices
    Epitaxial growth
    Interfaces (materials)
    Molecular beam epitaxy
    Semiconducting silicon
    Abstract: Roughness parameters of sample surface and buried interfaces in a series of thin layers of Si0.4Ge0.6 grown on Si(100) by molecular beam epitaxy (MBE) were measured by using the technique of grazing-incidence x-ray scattering (GIXS). The strain in the layer and the critical thickness of the film were determined from x-ray diffraction of the Si(004) peak. The roughness parameters can be described by a scaling-law with an exponent β = 0.71 for both the surface and interfacial roughness. Establishment of a scaling law thus allows a possibility of predicting the interfacial roughness as a function of the epilayer thickness.
    URI: http://www.mrs.org/s_mrs/index.asp
    Appears in Collections:[物理系] 會議論文

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