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    National Tsing Hua University Institutional Repository > 理學院 > 化學系 > 期刊論文 >  Growth behavior of Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 films on silicon substrates synthesized by pulsed laser deposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56840


    Title: Growth behavior of Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 films on silicon substrates synthesized by pulsed laser deposition
    Authors: Yeh,M. H.;Liu,K. S.;Ling,Y. C.;Wang,J. P.;Lin,I. N.
    教師: 凌永健
    Date: 1995
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 77, Issue 10, MAY 15 1995, Pages 5335-5340
    Keywords: Lead compounds
    Thin films
    Film growth
    Silicon
    Deposition
    Pulsed laser applications
    Strontium compounds
    Phase transitions
    Kinetic theory
    Permittivity
    Thermal effects
    Electric variables measurement
    Abstract: A study on synthesis of PLZT, a lead-based thin film, through PLD technique was conducted. The films deposited are possibly formed by adherences of the species onto the substrate as cluster then the transformation of those phases into a crystalline structure. The thin film growth behavior is affected by deposition conditions and the substrate materials. Lead-based ferroelectric thin films for applications are promising as pyroelectric detectors, piezoelectric vibrators, electro-optic devices and nonvolatile random access memories.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56840
    Appears in Collections:[化學系] 期刊論文

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