National Tsing Hua University Institutional Repository:Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on si(100)-(2×1)
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    NTHUR > College of Science  > Department of Chemistry > CHEM Journal / Magazine Articles  >  Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on si(100)-(2×1)


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/57216


    Title: Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on si(100)-(2×1)
    Authors: WU Jin-Bao;YANG Yaw-Wen;LIN Yi-Feng;CHIU Hsin-Tien
    Teacher: 楊耀文
    Date: 2003
    Publisher: American Vacuum Society
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, American Vacuum Society, Volume 21, Issue 5, 2003, Pages 1620-1624
    Keywords: tungsten
    metal-organic
    bis(tertbutylimido)bis(diethylamido)tungsten precursor
    si(100)-(2×1)
    Abstract: Thermal decomposition of a metal-organic chemical vapor deposition precursor, (t-BuN=)2W(-NEt2)2, (bis(tertbutylimido)bis(diethylamido)tungsten, on Si(100) has been studied by means of synchrotron radiation-based x-rayphotoemission spectroscopy and temperature programmed desorption spectroscopy. The resultant thin films consist of tungsten metal, silicon carbides and silicon nitrides. Major desorption products originated from ligand decomposition include imine (C2H5N=CHCH3) that is derived from β-H elimination of diethylamido ligand, and isobutene (C4H8) that is generated from γ-H elimination of t-butylimido ligands. The transmetalation of the precursor leads to tungsten metal adsorption on Si(100); by contrast, tungsten nitrides, tungsten carbides and tungsten oxides are produced as the same precursor is decomposed on SiO2 surface.
    URI: www.avs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/57216
    Appears in Collections:[Department of Chemistry] CHEM Journal / Magazine Articles

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