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    National Tsing Hua University Institutional Repository > 理學院 > 化學系 > 期刊論文 >  Structural order in oxygenated gallium nitride films


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/57227


    Title: Structural order in oxygenated gallium nitride films
    Authors: TRAN N. H.;HOLZSCHUH W. J.;LAMB R. N.;LAI L. J.;YANG Y. W.
    教師: 楊耀文
    Date: 2003
    Publisher: American Chemical Society
    Relation: JOURNAL OF PHYSICAL CHEMISTRY B, ACS American Chemical Society, Volume 107, Issue 35, SEP 4 2003, Pages 9256-9260
    Keywords: Structural order
    X-ray diffraction
    oxygenated gallium nitride films
    Abstract: Structural order in nanocrystalline, oxygenated GaN thin films (thickness ∼ 500 nm) has been examined. The films were grown using low-pressure chemical vapor deposition of (CH3)2GaN3 single source precursor. During deposition, residual oxygen from the vacuum environment was incorporated into the films. Photoemission spectroscopy indicated that oxygen mainly substituted nitrogen during deposition. Long-range X-ray diffraction indicated that the films were oriented along the hexagonal (002) direction when the incorporated concentration of oxygen was lower than 25 atomic % (at. %). Above this, the films were amorphous. The results of angle-dependent near-edge X-ray absorption fine structure facilitated the formation of a short-range structural model, which explained the influences of the oxygen concentration on the long-range order in the films. These studies are useful in understanding the structural evolution in doped-nitride films.
    URI: http://pubs.acs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/57227
    Appears in Collections:[化學系] 期刊論文

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