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    National Tsing Hua University Institutional Repository > 理學院 > 化學系 > 期刊論文 >  Influence of oxygen on the crystalline-amorphous transition in gallium nitride films

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/57286

    Title: Influence of oxygen on the crystalline-amorphous transition in gallium nitride films
    Authors: TRAN Nguyen H.;LAMB Robert N.;LEE JENE LAI;YAW WEN YANG
    教師: 楊耀文
    Date: 2005
    Publisher: American Chemical Society
    Relation: JOURNAL OF PHYSICAL CHEMISTRY B, ACS American Chemical Society, Volume 109, Issue 39, OCT 6 2005, Pages 18348-18351
    Keywords: Oxygen
    gallium nitride films
    Abstract: Oxygen is a common impurity in nitride-based materials that affects the properties of technologically important materials such as gallium nitride semiconductors. In this work, the influence of oxygen on the structural evolution of GaN films is investigated using near-edge X-ray absorption fine structure (NEXAFS). The combined spectra of Ga L3-edge, N K-edge, and O K-edge indicate that the gallium coordination, formed by a mixture of oxide and nitride bonds, is directly dependent on the concentration of oxygen in the films. Below 24 atom % oxygen, gallium atoms are tetrahedrally coordinated within the films, while at higher concentrations the octahedral environment persists.
    URI: http://pubs.acs.org/
    Appears in Collections:[化學系] 期刊論文

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