National Tsing Hua University Institutional Repository:Method for fabricating shallow trench isolation structure
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    NTHUR > College of Engineering  > Department of Material Science and Engineering  > MSE Patents >  Method for fabricating shallow trench isolation structure

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    Title: Method for fabricating shallow trench isolation structure
    Authors: Yang, Gwo-Shii;Yew, Tri-Rung;Chen, Coming;Lur, Water
    Teacher: 游萃蓉
    Date: 2001/10/23
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: shallow trench
    pad oxide layer
    silicon nitride layer
    doped silicon dioxide layer
    Abstract: A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a silicon nitride layer are formed in sequence on a substrate. A trench is formed in the substrate and a liner oxide layer is formed on a sidewall of the trench. A doped silicon dioxide layer is formed on the silicon nitride layer and fills the trench. An annealing process is performed to density the doped silicon dioxide layer. A portion of the doped silicon dioxide layer is removed to expose the silicon nitride layer by a planarization process.
    Appears in Collections:[Department of Material Science and Engineering ] MSE Patents

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