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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 專利  >  Method of manufacturing shallow trench isolation

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/58548

    Title: Method of manufacturing shallow trench isolation
    Authors: Yew, Tri-Rung;Huang, Kuo-Tai;Yang, Gwo-Shii;Lur, Water
    教師: 游萃蓉
    Date: 2001/6/26
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: shallow trench isolation
    isolation structure
    silicon nitride layer
    photoresist layer
    oxide layer
    chemical-mechanical polishing operation
    Abstract: A method of manufacturing shallow trench isolation structures. The method includes the steps of depositing insulating material into the trench of a substrate to form an insulation layer. The substrate has a plurality of active regions, each occupying a different area and having different sizes. In addition, there is a silicon nitride layer on top of each active region. Thereafter, a photoresist layer is then deposited over the insulation layer. Next, a portion of the photoresist layer is etched back to expose a portion of the oxide layer so that the remaining photoresist material forms a cap layer over the recessed area of the insulation layer. Subsequently, using the photoresist cap layer as a mask, the insulation layer is etched to remove a portion of the exposed oxide layer, thereby forming trenches within the oxide layer. After that, the photoresist cap layer is removed. Finally, a chemical-mechanical polishing operation is carried out to polish the insulation layer until the silicon nitride layer is exposed.
    URI: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=7&f=G&l=50&d=PTXT&p=1&S1=6251783&OS=6251783&RS=6251783;
    Appears in Collections:[材料科學工程學系] 專利

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