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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 專利  >  Method of fabricating shallow trench isolation structure

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/58550

    Title: Method of fabricating shallow trench isolation structure
    Authors: Yang, Gwo-Shii;Shih, Hsueh-Hao;Liu, Chih-Chien;Yew, Tri-Rung
    教師: 游萃蓉
    Date: 2001/6/19
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: shallow trench
    isolation structure
    preserve layer
    oxide layer
    wet densification step
    planarization step
    Abstract: A method of fabricating a shallow trench isolation structure is described. A preserve layer is formed on a substrate. A trench is formed in the substrate and the preserve layer. An oxide layer is formed over the substrate to fill the trench. A wet densification step is performed in a moist environment. A planarization step is performed until the preserve layer is exposed. A shallow trench isolation structure is formed.
    URI: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=2&f=G&l=50&d=PTXT&p=1&S1=6248644&OS=6248644&RS=6248644;
    Appears in Collections:[材料科學工程學系] 專利

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