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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/58559

    Title: Method for forming shallow trench isolation
    Authors: Yong, Gwo-Shii;Liu, Chih-Chien;Yew, Tri-Rung;Lur, Water
    教師: 游萃蓉
    Date: 2001/4/10
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: shallow trench
    silicon oxide layer
    photoresist layer
    Abstract: A method for forming shallow trench isolation is disclosed. The method includes forming a trench in a semiconductor substrate, and then blanket depositing a silicon oxide layer over the semiconductor substrate by a plasma process, thereby substantially refilling the trench. Thereafter, a photoresist layer is formed on the plasma deposited silicon oxide layer, followed by etching back a portion of the photoresist layer. The plasma deposited silicon oxide layer is then isotropically etched, and the photoresist layer is then finally removed.
    URI: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=1&f=G&l=50&d=PTXT&p=1&S1=6214691&OS=6214691&RS=6214691;
    Appears in Collections:[材料科學工程學系] 專利

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