National Tsing Hua University Institutional Repository:Electron field emission properties on UNCD coated Si-nanowires
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    Title: Electron field emission properties on UNCD coated Si-nanowires
    Authors: Tzeng, Yu-Fen;Lee, Yen-Chih;Lee, Chi-Young;Chiu, Hsin-Tien;Lin, I-Nan
    Teacher: 李紫原
    Date: 2008
    Publisher: Elsevier
    Relation: DIAMOND AND RELATED MATERIALS,Volume: 17,Issue: 4-5,Special Issue: Sp. Iss. SI,Pages: 753-757,Published: APR-MAY 2008
    Abstract: The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE-CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE-CVD time interval for coating the UNCD films, attaining small turn-on field (E-0=6.4 V/mu m) and large emission current density (J(e)=6.0 mA/cm(2) at 12.6 V/mu m). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E-0)(SiNWs)=8.6 V/mu m and (J(e))(SiNWs)<0.01 mA/cm(2) at the same applied field) and is comparable to those for carbon nanotubes.
    Appears in Collections:[Center for Nanotechology, Materials Science, and Microsystems ] CNMM Journal / Magazine Articles

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